PSMN1R5-30BLEJ
- Mfr.Part #
- PSMN1R5-30BLEJ
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 120A D2PAK
- Stock
- 19,751
- In Stock :
- 19,751
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 14934pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Weight :
- 3.949996g
- Turn-Off Delay Time :
- 191.8 ns
- Published :
- 2012
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 25A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 120A
- Number of Pins :
- 3
- Wire Gauge (Max) :
- 24 AWG
- Max Dual Supply Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 228nC @ 10V
- Mounting Type :
- Surface Mount
- Wire Gauge (Min) :
- 20 AWG
- Material :
- Brass
- Number of Terminations :
- 2
- Number of Channels :
- 1
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Termination :
- Crimp
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 156.1ns
- Turn On Delay Time :
- 100.6 ns
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 401W Tc
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 99.2 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Plating :
- Gold, Tin
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Datasheets
- PSMN1R5-30BLEJ

N-Channel Tape & Reel (TR) 1.5m Ω @ 25A, 10V ±20V 14934pF @ 15V 228nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN1R5-30BLEJ Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14934pF @ 15V.This device has a continuous drain current (ID) of [120A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 191.8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 100.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN1R5-30BLEJ Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 191.8 ns
PSMN1R5-30BLEJ Applications
There are a lot of Nexperia USA Inc.
PSMN1R5-30BLEJ applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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