PSMN130-200D,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Fall Time (Typ) :

38 ns

Input Capacitance (Ciss) (Max) @ Vds :

2470pF @ 25V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Rise Time :

46ns

Power Dissipation :

150W

Transistor Application :

SWITCHING

Number of Elements :

1

Series :

TrenchMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

80A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Height :

2.38mm

Continuous Drain Current (ID) :

20A

Resistance :

130mOhm

Published :

2010

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

50 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Form :

Gull wing

Length :

6.35mm

JESD-609 Code :

e3

Weight :

453.59237mg

Max Dual Supply Voltage :

200V

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

130m Ω @ 25A, 10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Width :

6.22mm

Number of Terminations :

2

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain to Source Breakdown Voltage :

200V

Avalanche Energy Rating (Eas) :

252 mJ