PSMN070-200P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4570pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Terminations :

3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Rise Time :

100ns

Turn On Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate to Source Voltage (Vgs) :

20V

HTS Code :

8541.29.00.75

Power Dissipation :

250W

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

35A

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

140A

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

Drain-source On Resistance-Max :

0.07Ohm

Vgs (Max) :

±20V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

70m Ω @ 17A, 10V

Transistor Application :

SWITCHING

Published :

2002

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

Series :

TrenchMOS™

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Fall Time (Typ) :

90 ns

Factory Lead Time :

20 Weeks

Avalanche Energy Rating (Eas) :

462 mJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

80 ns

Surface Mount :

No

Max Dual Supply Voltage :

200V