PSMN059-150Y,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

4

JEDEC-95 Code :

MO-235

Number of Elements :

1

Rise Time :

42ns

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Max Dual Supply Voltage :

150V

Avalanche Energy Rating (Eas) :

255 mJ

Fall Time (Typ) :

11.1 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Resistance :

59mOhm

Power Dissipation-Max :

113W Tc

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

43A

Turn On Delay Time :

14.2 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Package / Case :

SC-100, SOT-669

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Terminal Position :

Single

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Drain to Source Breakdown Voltage :

150V

Number of Pins :

4

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Form :

Gull wing

Published :

2013

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

59m Ω @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1529pF @ 30V

Turn-Off Delay Time :

54.2 ns

Gate Charge (Qg) (Max) @ Vgs :

27.9nC @ 10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

113W