PSMN027-100PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

59 mJ

JESD-609 Code :

e3

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Rise Time :

11.4ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Pin Count :

3

Turn On Delay Time :

14.4 ns

Number of Pins :

3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Max Dual Supply Voltage :

100V

Turn-Off Delay Time :

29.6 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Number of Terminations :

3

Published :

2011

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

103W Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

37A

Rds On (Max) @ Id, Vgs :

26.8m Ω @ 15A, 10V

Power Dissipation :

103W

Transistor Application :

SWITCHING

Fall Time (Typ) :

8.9 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1624pF @ 50V

Drain-source On Resistance-Max :

0.0268Ohm

Element Configuration :

Single