PSMN025-80YLX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

150A

Power Dissipation-Max :

95W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

80V

Drain to Source Voltage (Vdss) :

80V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.027Ohm

Factory Lead Time :

12 Weeks

Reference Standard :

IEC-60134

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Continuous Drain Current (ID) :

37A

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

45.4 mJ

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

MO-235

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

17.1nC @ 5V

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

2703pF @ 25V

Mount :

Surface Mount

Published :

2016

Vgs (Max) :

±20V

Package / Case :

SC-100, SOT-669

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE