PSMN017-80BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

80V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2012

DS Breakdown Voltage-Min :

80V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Avalanche Energy Rating (Eas) :

55 mJ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1573pF @ 40V

Surface Mount :

yes

Mounting Type :

Surface Mount

Power Dissipation-Max :

103W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Reference Standard :

IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.017Ohm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)