PSMN012-80BS,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Rise Time :

16ns

Continuous Drain Current (ID) :

74A

Number of Pins :

3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Published :

2012

Fall Time (Typ) :

6 ns

Turn-Off Delay Time :

33 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

Power Dissipation :

148W

Power Dissipation-Max :

148W Tc

Turn On Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2782pF @ 12V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

73V

Surface Mount :

yes

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Elements :

1

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Case Connection :

DRAIN

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

295A