PSMN012-100YLX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

85A Ta

Avalanche Energy Rating (Eas) :

139 mJ

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

100V

Number of Terminations :

4

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 25A, 10V

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Surface Mount :

yes

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Pulsed Drain Current-Max (IDM) :

339A

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Drain-source On Resistance-Max :

0.012Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

TrenchMOS™

JEDEC-95 Code :

MO-235

Terminal Form :

Gull wing

Power Dissipation-Max :

238W Ta

Drain Current-Max (Abs) (ID) :

85A

Transistor Application :

SWITCHING

Reference Standard :

IEC-60134

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

7973pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V