PSMN009-100B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

43 ns

Turn-Off Delay Time :

120 ns

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Rise Time :

59ns

Max Dual Supply Voltage :

100V

Turn On Delay Time :

38 ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 25A, 10V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

120 mJ

Continuous Drain Current (ID) :

75A

Series :

TrenchMOS™

Published :

2009

Number of Elements :

1

Power Dissipation-Max :

230W Tc

Terminal Form :

Gull wing

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

Number of Pins :

3

JESD-609 Code :

e3

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0088Ohm

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

2

Power Dissipation :

230W

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

FET Type :

N-Channel