PMZB950UPELYL

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

360mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Reference Standard :

IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Vgs (Max) :

±8V

JESD-30 Code :

R-PBCC-N3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drain Current-Max (Abs) (ID) :

0.5A

FET Type :

P-Channel

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V

Package / Case :

3-XFDFN

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 4.5V

Number of Terminations :

3

Published :

2016

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

500mA Ta