PMZB290UNE,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

360mW Ta 2.7W Tc

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Turn-Off Delay Time :

86 ns

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

380m Ω @ 500mA, 4.5V

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Fall Time (Typ) :

31 ns

Drain Current-Max (Abs) (ID) :

1A

Rise Time :

4ns

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Package / Case :

3-XFDFN

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Surface Mount :

yes

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Elements :

1

Pin Count :

3

Number of Pins :

3

Vgs(th) (Max) @ Id :

950mV @ 250μA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation :

715mW

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Continuous Drain Current (ID) :

1A

Max Dual Supply Voltage :

20V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

20V

Published :

2012

Terminal Position :

BOTTOM

Radiation Hardening :

No