PMZB200UNEYL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

3-XFDFN

Power Dissipation-Max :

350mW Ta 6.25W Tc

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

89pF @ 15V

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Pin Count :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.4A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.25Ohm

Published :

2015

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

950mV @ 250μA

Terminal Form :

NO LEAD

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

250m Ω @ 1.4A, 4.5V