PMZB290UNE,315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Power Dissipation :

715mW

Published :

2012

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Rise Time :

4ns

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Transistor Element Material :

SILICON

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1A

Power Dissipation-Max :

360mW Ta 2.7W Tc

Continuous Drain Current (ID) :

1A

Fall Time (Typ) :

31 ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 500mA, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

Contact Plating :

Tin

Element Configuration :

Single

Vgs (Max) :

±8V

JESD-609 Code :

e3

Turn-Off Delay Time :

86 ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Factory Lead Time :

8 Weeks

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Package / Case :

3-XFDFN