PMCXB900UEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

600mA 500mA

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

950mV @ 250μA

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

6

Number of Elements :

2

Pin Count :

6

Transistor Application :

SWITCHING

Number of Terminations :

6

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Continuous Drain Current (ID) :

500mA

Surface Mount :

yes

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

620m Ω @ 600mA, 4.5V

Published :

2015

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

21.3pF @ 10V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel Complementary

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

265mW

Package / Case :

6-XFDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR