PMBTA44,215
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- Mfr.Part #
- PMBTA44,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO236AB
- Stock
- 15,017
- In Stock ：
- 15,017
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Terminal Position :
- Dual
- Frequency :
- 20MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 400V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Voltage :
- 400V
- Power Dissipation :
- 250mW
- hFE Min :
- 40
- Number of Terminations :
- 3
- Current :
- 3A
- Transition Frequency :
- 20MHz
- Collector Base Voltage (VCBO) :
- 500V
- Max Power Dissipation :
- 250mW
- Base Part Number :
- PMBTA44
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 20MHz
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Collector Emitter Breakdown Voltage :
- 400V
- Mount :
- Surface Mount
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 300mA
- Datasheets
- PMBTA44,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBTA44,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 20MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 300mA volts.
PMBTA44,215 Features
the DC current gain for this device is 50 @ 10mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
PMBTA44,215 Applications
There are a lot of Nexperia USA Inc.
PMBTA44,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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