PMBTA14,215
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- Mfr.Part #
- PMBTA14,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PMBTA14 - SMALL SIGNAL
- Stock
- 1,945
- In Stock ：
- 1,945
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 125MHz
- Current - Collector (Ic) (Max) :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power - Max :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 125MHz
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- JESD-30 Code :
- R-PDSO-G3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Surface Mount :
- yes
- Base Part Number :
- PMBTA14
- JEDEC-95 Code :
- TO-236AB
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PMBTA14,215
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBTA14,215 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 125MHz.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
PMBTA14,215 Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
PMBTA14,215 Applications
There are a lot of Nexperia USA Inc.
PMBTA14,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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