PMBTA06,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

80V

Transition Frequency :

100MHz

Element Configuration :

Single

Published :

2009

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Collector Emitter Breakdown Voltage :

80V

Max Collector Current :

500mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation :

250mW

Max Breakdown Voltage :

80V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

150°C TJ

Number of Terminations :

3

Collector Base Voltage (VCBO) :

80V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Frequency :

100MHz

Number of Pins :

3

Base Part Number :

PMBTA06

Emitter Base Voltage (VEBO) :

4V

Current - Collector Cutoff (Max) :

50nA ICBO

Series :

Automotive, AEC-Q101

Mount :

Surface Mount

Gain Bandwidth Product :

100MHz

Transistor Type :

NPN