PEMZ7,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Published :

2009

JESD-609 Code :

e3

Gain Bandwidth Product :

420MHz

Vce Saturation (Max) @ Ib, Ic :

220mV @ 10mA, 200mA

Transition Frequency :

420MHz

Max Power Dissipation :

300mW

Number of Terminations :

6

Pin Count :

6

Mount :

Surface Mount

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

15V

Emitter Base Voltage (VEBO) :

6V

Frequency :

420MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA 2V

Transistor Application :

SWITCHING

Frequency - Transition :

420MHz 280MHz

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Elements :

2

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

12V

hFE Min :

200

Collector Emitter Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Polarity :

NPN, PNP

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Max Collector Current :

500mA

Power Dissipation :

300mW

Transistor Type :

NPN, PNP