PEMZ1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Pins :

6

Mounting Type :

Surface Mount

Transition Frequency :

100MHz

Frequency :

100MHz

Collector Emitter Breakdown Voltage :

40V

Gain Bandwidth Product :

100MHz

Base Part Number :

P*MZ1

Max Power Dissipation :

200mW

Number of Elements :

2

hFE Min :

120

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

JESD-609 Code :

e3

Weight :

4.535924g

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Power Dissipation :

200mW

Max Collector Current :

100mA

Length :

6.35mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Height :

6.35mm

Power - Max :

300mW

Collector Emitter Voltage (VCEO) :

40V

ECCN Code :

EAR99

Polarity :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Collector Base Voltage (VCBO) :

50V

Transistor Type :

NPN, PNP

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Width :

6.35mm

Number of Terminations :

6

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2001

Terminal Form :

Flat

Mount :

Surface Mount