PEMZ7,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Flat

Power Dissipation :

300mW

Number of Terminations :

6

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

6V

Frequency - Transition :

420MHz 280MHz

Transistor Element Material :

SILICON

Transistor Type :

NPN, PNP

Mount :

Surface Mount

Max Breakdown Voltage :

12V

Published :

2009

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Pins :

6

Pin Count :

6

Terminal Finish :

Tin (Sn)

Transition Frequency :

420MHz

Max Power Dissipation :

300mW

Max Collector Current :

500mA

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

12V

Number of Elements :

2

Polarity :

NPN, PNP

Gain Bandwidth Product :

420MHz

Frequency :

420MHz

Vce Saturation (Max) @ Ib, Ic :

220mV @ 10mA, 200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

12V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA 2V