PEMZ7,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

500mA

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

420MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA 2V

Package / Case :

SOT-563, SOT-666

Published :

2009

Polarity :

NPN, PNP

Number of Pins :

6

Max Power Dissipation :

300mW

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

15V

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Terminal Form :

Flat

Power Dissipation :

300mW

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

220mV @ 10mA, 200mA

ECCN Code :

EAR99

Number of Elements :

2

Gain Bandwidth Product :

420MHz

Frequency - Transition :

420MHz 280MHz

Collector Emitter Breakdown Voltage :

12V

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

420MHz

Number of Terminations :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

12V

Collector Emitter Voltage (VCEO) :

12V

Transistor Type :

NPN, PNP

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)