PDTC115EMB

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Resistor - Emitter Base (R2) :

100 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Pins :

3

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Number of Elements :

1

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Resistor - Base (R1) :

100 k Ω

Transistor Type :

NPN - Pre-Biased

Pin Count :

3

Element Configuration :

Single

Base Part Number :

PDTC115

Package / Case :

3-XFDFN

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Transition Frequency :

230MHz

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

150mV

Max Collector Current :

20mA

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Terminal Form :

NO LEAD

Frequency - Transition :

230MHz

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

250mW