PDTA123EE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Voltage - Collector Emitter Breakdown (Max) :

50V

Power - Max :

150mW

Operating Temperature (Max) :

150°C

Published :

2003

Resistor - Emitter Base (R2) :

2.2 k Ω

Number of Terminations :

3

Resistor - Base (R1) :

2.2 k Ω

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SC-75, SOT-416

Power Dissipation-Max (Abs) :

0.15W

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Base Part Number :

PDTA123

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Mounting Type :

Surface Mount