NTLJD3115PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

19.8 ns

Current Rating :

-4.1A

Contact Plating :

Tin

Factory Lead Time :

9 Weeks

Packaging :

Tape and Reel (TR)

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2mm

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 4.5V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

100MOhm

Number of Terminations :

6

Pin Count :

6

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Continuous Drain Current (ID) :

3.3A

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Power Dissipation :

1.5W

Base Part Number :

NTLJD3115P

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

8V

Published :

2006

FET Type :

2 P-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

2.3A

Fall Time (Typ) :

15 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

531pF @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Height :

750μm

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Voltage - Rated DC :

-20V

Case Connection :

DRAIN

Max Power Dissipation :

710mW

Number of Elements :

2

Pbfree Code :

yes

Transistor Element Material :

SILICON

Package / Case :

6-WDFN Exposed Pad

Length :

2mm

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V