NTGD4167CT1G
- Mfr.Part #
- NTGD4167CT1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
- Stock
- 500,368
- In Stock :
- 500,368
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 15V
- Published :
- 2007
- Factory Lead Time :
- 4 Weeks
- Threshold Voltage :
- 900mV
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn-Off Delay Time :
- 22 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5.5nC @ 4.5V
- REACH SVHC :
- No SVHC
- Base Part Number :
- NTGD4167C
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 6
- Rise Time :
- 8ns
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time :
- 8 ns
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.7mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.1W
- Max Power Dissipation :
- 900mW
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Number of Elements :
- 2
- Number of Pins :
- 6
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N and P-Channel
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.6A, 4.5V
- Fall Time (Typ) :
- 8 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Height :
- 1mm
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Element Configuration :
- Dual
- Resistance :
- 90mOhm
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A 1.9A
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 2.6A
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.1mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Datasheets
- NTGD4167CT1G

NTGD4167CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NTGD4167CT1G Description
A double complementary rectifier is used to provide positive and negative DC output with the same voltage. In most cases, the negative current is significantly smaller than the positive current requirement, so the relationship between AC voltage and current and DC voltage and current should be the same as the full-wave center of the tap described earlier.
NTGD4167CT1G Features
? Complementary N?Channel and P?Channel MOSFET
? Small Size (3 x 3 mm) Dual TSOP?6 Package
? Leading Edge Trench Technology for Low On Resistance
? Reduced Gate Charge to Improve Switching Response
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb?Free Device
NTGD4167CT1G Applications
? DC?DC Conversion Circuits
? Load/Power Switching with Level Shif t
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