NTE159MCP
- Mfr.Part #
- NTE159MCP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.8A TO92
- Stock
- 76
- In Stock :
- 76
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Pin Count :
- 3
- Configuration :
- Single
- Product Status :
- Active
- Category :
- Bipolar Small Signal
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector-Base Voltage :
- 80(V)
- Subcategory :
- BIP General Purpose Small Signal
- Collector Current-Max (IC) :
- 1 A
- Mounting Type :
- Through Hole
- Emitter-Base Voltage :
- 5(V)
- Terminal Position :
- BOTTOM
- Package Shape :
- Round
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- ECCN Code :
- EAR99
- Power Dissipation :
- 0.625(W)
- Collector Current (DC) :
- 0.8(A)
- Polarity/Channel Type :
- NPN AND PNP
- Package Type :
- TO-92
- Qualification Status :
- Not Qualified
- Rad Hardened :
- No
- Additional Feature :
- MATCHED COMPLIMENTARY PAIR CONTAINS NTE123AP AND NTE159
- Transistor Polarity :
- PNP
- Supplier Device Package :
- TO-92
- Output Power :
- Not Required(W)
- Transistor Application :
- SWITCHING
- Collector-Emitter Voltage-Max :
- 80 V
- Mounting :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Package :
- Bag
- Power - Max :
- 625 mW
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Operating Temp Range :
- -55C to 150C
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Surface Mount :
- No
- Number of Terminals :
- 3
- Current - Collector (Ic) (Max) :
- 800 mA
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Operating Temperature Classification :
- Military
- Reach Compliance Code :
- Unknown
- Manufacturer :
- NTE Electronics
- Series :
- -
- JESD-30 Code :
- O-PBCY-W3
- DC Current Gain-Min (hFE) :
- 180
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA, 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Frequency - Transition :
- 250MHz
- JEDEC-95 Code :
- TO-92
- Datasheets
- NTE159MCP

PNP -55°C ~ 150°C (TJ) 50nA (ICBO) 1 Elements SILICON NPN AND PNP TO-226-3, TO-92-3 (TO-226AA) Through Hole
NTE159MCP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The product comes in the supplier device package of TO-92.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
NTE159MCP Features
the DC current gain for this device is 50 @ 10mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-92
NTE159MCP Applications
There are a lot of NTE Electronics, Inc
NTE159MCP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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