NTE129MCP

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Mfr.Part #
NTE129MCP
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 80V 1A TO39
Stock
55
In Stock :
55

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
No
JEDEC-95 Code :
TO-39
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Frequency - Transition :
-
Power - Max :
1.25 W
Additional Feature :
MATCHED COMPLIMENTARY PAIR CONTAINS NTE128 AND NTE129
Package Shape :
Round
Terminal Form :
Wire
Terminal Position :
BOTTOM
Collector Current-Max (IC) :
1 A
HTS Code :
8541.29.00.75
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
50nA (ICBO)
Polarity/Channel Type :
NPN AND PNP
JESD-30 Code :
O-MBCY-W3
Subcategory :
BIP General Purpose Small Signal
ECCN Code :
EAR99
Package / Case :
TO-205AD, TO-39-3 Metal Can
Collector-Emitter Voltage-Max :
80 V
Manufacturer :
NTE Electronics
Configuration :
SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) :
90
Qualification Status :
Not Qualified
Supplier Device Package :
TO-39
Case Connection :
COLLECTOR
Product Status :
Active
Mounting Type :
Through Hole
Series :
-
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
1 A
Reach Compliance Code :
Unknown
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Number of Elements :
2
Package :
Bag
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Voltage - Collector Emitter Breakdown (Max) :
80 V
Number of Terminals :
3
Operating Temperature :
-65°C ~ 200°C (TJ)
Transistor Type :
PNP
Datasheets
NTE129MCP
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE129MCP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AD, TO-39-3 Metal Can, Mounting Type:Through Hole, Operating Temperature:-65°C ~ 200°C (TJ), NTE129MCP pinout, NTE129MCP datasheet PDF, NTE129MCP amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE129MCP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE129MCP


PNP -65°C ~ 200°C (TJ) 50nA (ICBO) 2 Elements SILICON NPN AND PNP TO-205AD, TO-39-3 Metal Can Through Hole

NTE129MCP Overview


In this device, the DC current gain is 100 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-39.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.

NTE129MCP Features


the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39


NTE129MCP Applications


There are a lot of NTE Electronics, Inc
NTE129MCP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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