NTE129MCP
- Mfr.Part #
- NTE129MCP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 55
- In Stock :
- 55
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-39
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Frequency - Transition :
- -
- Power - Max :
- 1.25 W
- Additional Feature :
- MATCHED COMPLIMENTARY PAIR CONTAINS NTE128 AND NTE129
- Package Shape :
- Round
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Collector Current-Max (IC) :
- 1 A
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Polarity/Channel Type :
- NPN AND PNP
- JESD-30 Code :
- O-MBCY-W3
- Subcategory :
- BIP General Purpose Small Signal
- ECCN Code :
- EAR99
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector-Emitter Voltage-Max :
- 80 V
- Manufacturer :
- NTE Electronics
- Configuration :
- SEPARATE, 2 ELEMENTS
- DC Current Gain-Min (hFE) :
- 90
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-39
- Case Connection :
- COLLECTOR
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Series :
- -
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 1 A
- Reach Compliance Code :
- Unknown
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Number of Elements :
- 2
- Package :
- Bag
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Number of Terminals :
- 3
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Datasheets
- NTE129MCP

PNP -65°C ~ 200°C (TJ) 50nA (ICBO) 2 Elements SILICON NPN AND PNP TO-205AD, TO-39-3 Metal Can Through Hole
NTE129MCP Overview
In this device, the DC current gain is 100 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-39.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
NTE129MCP Features
the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39
NTE129MCP Applications
There are a lot of NTE Electronics, Inc
NTE129MCP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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