NTB6N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Continuous Drain Current (ID) :

6 A

Pin Count :

3

Number of Terminals :

2

Package :

Bulk

Avalanche Energy Rating (Eas) :

450 mJ

Manufacturer :

Rochester Electronics LLC

DS Breakdown Voltage-Min :

600 V

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

1.2 Ω

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

600 V

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

21 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Series :

*

Terminal Position :

Single

Transistor Element Material :

SILICON

RoHS :

Compliant