NTB60N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

60A

Pin Count :

3

Turn-Off Delay Time :

94.5 ns

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Length :

10.29mm

Resistance :

16mOhm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Width :

9.65mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

JESD-30 Code :

R-PSSO-G2

Rise Time :

180.7ns

JESD-609 Code :

e3

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pbfree Code :

yes

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.4W Ta 150W Tj

Fall Time (Typ) :

142.5 ns

Avalanche Energy Rating (Eas) :

454 mJ

Threshold Voltage :

2.85V

Number of Elements :

1

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Height :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

60A

Voltage - Rated DC :

60V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

150W

Published :

2005

Turn On Delay Time :

25.5 ns