NTB60N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±15V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 5V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

454 mJ

Rds On (Max) @ Id, Vgs :

16m Ω @ 30A, 5V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

225

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.016Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3075pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

15V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Fall Time (Typ) :

237 ns

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Voltage - Rated DC :

60V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Mount :

Surface Mount

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Rise Time :

576ns

Published :

2005

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Number of Elements :

1

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

100 ns

Power Dissipation :

150W

Packaging :

Tube

Current Rating :

60A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

180A

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.4W Ta 150W Tj