NTB60N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Case Connection :

DRAIN

Rise Time :

180.7ns

Avalanche Energy Rating (Eas) :

454 mJ

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

60A Ta

RoHS Status :

RoHS Compliant

Packaging :

Tube

Fall Time (Typ) :

142.5 ns

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.4W Ta 150W Tj

Pulsed Drain Current-Max (IDM) :

180A

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V

Element Configuration :

Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.014Ohm

Voltage - Rated DC :

60V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Turn-Off Delay Time :

94.5 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Power Dissipation :

150W

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Current Rating :

60A

Number of Pins :

3