NTB65N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

65A

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Pin Count :

3

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

65A

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0105Ohm

HTS Code :

8541.29.00.95

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Rise Time :

53ns

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

7.6A

Avalanche Energy Rating (Eas) :

60 mJ

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Voltage - Rated DC :

24V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Element Configuration :

Single

JESD-609 Code :

e0

Turn-Off Delay Time :

14 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

24V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 30A, 10V

Number of Elements :

1

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 20V

Power Dissipation :

62.5W

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

160A

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

240

Drain to Source Voltage (Vdss) :

25V

Lead Free :

Contains Lead