NTB65N02RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

24V

RoHS Status :

RoHS Compliant

Current Rating :

65A

Transistor Element Material :

SILICON

Published :

2008

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 30A, 10V

Power Dissipation :

62.5W

Number of Terminations :

2

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Element Configuration :

Single

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Avalanche Energy Rating (Eas) :

60 mJ

Drain Current-Max (Abs) (ID) :

7.6A

Packaging :

Tube

Continuous Drain Current (ID) :

65A

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0105Ohm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

160A

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 20V

Number of Pins :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3