NTB5605PT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Vgs(th) (Max) @ Id :

2V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Threshold Voltage :

-1.5V

Transistor Element Material :

SILICON

Power Dissipation-Max :

88W Tc

Drain to Source Breakdown Voltage :

-60V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pulsed Drain Current-Max (IDM) :

55A

Number of Pins :

3

Number of Elements :

1

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Factory Lead Time :

7 Weeks

Rise Time :

122ns

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

60V

Height :

4.83mm

Voltage - Rated DC :

-60V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

FET Type :

P-Channel

Turn-Off Delay Time :

29 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

18.5A

Turn On Delay Time :

12.5 ns

JESD-30 Code :

R-PSSO-G2

Width :

9.65mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Current Rating :

-18.5A

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

ECCN Code :

EAR99

Surface Mount :

yes

Length :

10.29mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

88W

Fall Time (Typ) :

75 ns

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Application :

SWITCHING