NTB5605PT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Height :

4.83mm

Continuous Drain Current (ID) :

18.5A

Fall Time (Typ) :

75 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

29 ns

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Surface Mount :

yes

Number of Terminations :

2

FET Type :

P-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Element Configuration :

Single

Power Dissipation-Max :

88W Tc

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Voltage - Rated DC :

-60V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Factory Lead Time :

7 Weeks

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Power Dissipation :

88W

Rise Time :

122ns

Published :

2005

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Threshold Voltage :

-1.5V

Current Rating :

-18.5A

Pulsed Drain Current-Max (IDM) :

55A

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

9.65mm

Length :

10.29mm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Drain to Source Breakdown Voltage :

-60V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Turn On Delay Time :

12.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V