NTB5412NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Pin Count :

3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

60A

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

155A

Avalanche Energy Rating (Eas) :

180 mJ

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3.22pF @ 25V

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

125W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.014Ohm

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V