NTB5605PG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

18.5A

JESD-609 Code :

e3

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.19pF @ 25V

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Pin Count :

3

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.14Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

338 mJ

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Elements :

1

Number of Terminations :

2

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

55A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Packaging :

Tube

Power Dissipation-Max :

88W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA