NST856BF3T5G
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- Mfr.Part #
- NST856BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT1123
- Stock
- 43,506
- In Stock ：
- 43,506
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Published :
- 2009
- Transistor Application :
- AMPLIFIER
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 347mW
- Collector Emitter Breakdown Voltage :
- 65V
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Package / Case :
- SOT-1123
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Power - Max :
- 290mW
- Max Power Dissipation :
- 347mW
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 65V
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Terminal Form :
- Flat
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Datasheets
- NST856BF3T5G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-1123 Tape & Reel (TR) Surface Mount
NST856BF3T5G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.
NST856BF3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 800mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NST856BF3T5G Applications
There are a lot of ON Semiconductor
NST856BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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