NST846BF3T5G
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- Mfr.Part #
- NST846BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT1123
- Stock
- 10,328
- In Stock ：
- 10,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Power - Max :
- 290mW
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 65V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 65V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Published :
- 2009
- Max Power Dissipation :
- 347mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Elements :
- 1
- Package / Case :
- SOT-1123
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 347mW
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Datasheets
- NST846BF3T5G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-1123 Tape & Reel (TR) Surface Mount
NST846BF3T5G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
NST846BF3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NST846BF3T5G Applications
There are a lot of ON Semiconductor
NST846BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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