NST847BF3T5G
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- Mfr.Part #
- NST847BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT1123
- Stock
- 8,053
- In Stock ：
- 8,053
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-1123
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 45V
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- NST847B
- Frequency :
- 100MHz
- Power - Max :
- 290mW
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 347mW
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 347mW
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 100MHz
- Datasheets
- NST847BF3T5G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-1123 Tape & Reel (TR) Surface Mount
NST847BF3T5G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
NST847BF3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NST847BF3T5G Applications
There are a lot of ON Semiconductor
NST847BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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