NJVMJD47T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

200μA

JESD-30 Code :

R-PSSO-G2

Frequency - Transition :

10MHz

Element Configuration :

Single

Base Part Number :

MJD47

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

350V

Collector Emitter Voltage (VCEO) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.56W

Terminal Finish :

Tin (Sn)

Height :

2.38mm

Collector Emitter Breakdown Voltage :

250V

Width :

6.73mm

Case Connection :

COLLECTOR

Surface Mount :

yes

Published :

2010

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Power - Max :

1.56W

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

3

Transition Frequency :

10MHz

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

JESD-609 Code :

e3

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Max Collector Current :

1A

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

1V

Number of Pins :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Length :

6.22mm

Transistor Type :

NPN