NJVMJD122T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

100V

Pin Count :

3

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

10μA

RoHS Status :

ROHS3 Compliant

Published :

2008

Max Power Dissipation :

1.75W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Pins :

3

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Frequency - Transition :

4MHz

Collector Emitter Voltage (VCEO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

100V

Transition Frequency :

4MHz

Collector Emitter Saturation Voltage :

2V

Factory Lead Time :

8 Weeks

Operating Temperature :

-65°C~150°C TJ

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

2

Collector Base Voltage (VCBO) :

100V

Height :

2.38mm

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Power - Max :

1.75W

Max Collector Current :

8A

Number of Elements :

1

Element Configuration :

Single

Length :

6.73mm

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Mounting Type :

Surface Mount