NJVMJB41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

3MHz

Frequency :

3MHz

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

100V

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Published :

2005

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Max Power Dissipation :

2W

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

2W

Current - Collector Cutoff (Max) :

700µA

Pbfree Code :

yes

Pin Count :

3

Base Part Number :

MJB41

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Height :

4.83mm

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Mounting Type :

Surface Mount

Length :

10.29mm

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.5V

Surface Mount :

yes

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

100V

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

Max Collector Current :

6A

Terminal Form :

Gull wing

Width :

11.05mm

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

3MHz

Element Configuration :

Single