NDS356P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Terminal Form :

Gull wing

Vgs (Max) :

±12V

Power Dissipation-Max :

500mW Ta

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

1.1A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Drain-source On Resistance-Max :

0.21Ohm

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G3

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminations :

3

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

210m Ω @ 1.3A, 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED