NDS351N

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Mfr.Part #
NDS351N
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 30V 1.1A SUPERSOT3
Stock
6,767
In Stock :
6,767

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 10V
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
9 ns
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Pins :
3
Power Dissipation :
500mW
Factory Lead Time :
10 Weeks
Turn-Off Delay Time :
26 ns
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Terminal Position :
Dual
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lead Free :
Contains Lead
Weight :
30mg
Terminal Finish :
Tin (Sn)
Rise Time :
16ns
Element Configuration :
Single
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Number of Terminations :
3
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 5V
Fall Time (Typ) :
16 ns
Gate to Source Voltage (Vgs) :
20V
Current Rating :
1.1A
Published :
2008
JESD-609 Code :
e3
Continuous Drain Current (ID) :
1.1A
Rds On (Max) @ Id, Vgs :
160m Ω @ 1.4A, 10V
Transistor Element Material :
SILICON
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Voltage - Rated DC :
30V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2V @ 250μA
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
30V
Current - Continuous Drain (Id) @ 25°C :
1.1A Ta
Power Dissipation-Max :
500mW Ta
Additional Feature :
LOGIC LEVEL COMPATIBLE
Introducing Transistors - FETs, MOSFETs - Single onsemi NDS351N from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, NDS351N pinout, NDS351N datasheet PDF, NDS351N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDS351N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS351N


N-Channel Tape & Reel (TR) 160m Ω @ 1.4A, 10V ±20V 140pF @ 10V 3.5nC @ 5V TO-236-3, SC-59, SOT-23-3

NDS351N Description


These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.



NDS351N Features


  • 1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.

  • Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.

  • High-density cell design for extremely low RDS(ON).

  • Exceptional on-resistance and maximum DC current capability.

  • Compact industry-standard SOT-23 surface-mount package.



NDS351N Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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