NDS331N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

500mW

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.3A

Width :

1.4mm

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Voltage - Rated DC :

20V

Rise Time :

25ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Turn On Delay Time :

5 ns

Threshold Voltage :

700mV

Weight :

30mg

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Terminations :

3

Terminal Position :

Dual

Number of Pins :

3

JESD-609 Code :

e3

Fall Time (Typ) :

5 ns

Number of Channels :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

500mW Ta

ECCN Code :

EAR99

Radiation Hardening :

No

Current Rating :

1.3A

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Resistance :

160mOhm

Mount :

Surface Mount

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Input Capacitance (Ciss) (Max) @ Vds :

162pF @ 10V

Height :

1.22mm

Length :

2.92mm

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

1V @ 250μA

Nominal Vgs :

700 mV

FET Type :

N-Channel

Pbfree Code :

yes

Published :

1998

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

10 ns

Element Configuration :

Single