NDS332P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Mounting Type :

Surface Mount

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Voltage - Rated DC :

-20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Qualification Status :

Not Qualified

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

500mW Ta

Width :

3.05mm

Vgs (Max) :

±8V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

-1A

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Number of Pins :

3

Number of Elements :

1

Continuous Drain Current (ID) :

1A

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.1A, 4.5V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-20V

Drain Current-Max (Abs) (ID) :

1A

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Power Dissipation :

500mW

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD RATED

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED