NDS356AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Width :

3.05mm

Dual Supply Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.3A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Current Rating :

-1.1A

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

53 ns

Number of Terminations :

3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Gate to Source Voltage (Vgs) :

20V

Resistance :

300mOhm

Element Configuration :

Single

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.1A

JESD-609 Code :

e3

Number of Pins :

3

Factory Lead Time :

10 Weeks

Nominal Vgs :

-2 V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

500mW Ta

Published :

1997

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Position :

Dual

Weight :

30mg

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 5V

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

Voltage - Rated DC :

-30V

Rise Time :

17ns

ECCN Code :

EAR99