NDS355N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

500mW Ta

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

245pF @ 10V

Resistance :

125mOhm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Factory Lead Time :

10 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Terminal Form :

Gull wing

ECCN Code :

EAR99

FET Type :

N-Channel

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Current Rating :

1.6A

Fall Time (Typ) :

14 ns

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Number of Pins :

3

Number of Channels :

1

Turn-Off Delay Time :

12 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Weight :

30mg

Continuous Drain Current (ID) :

1.6A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Mounting Type :

Surface Mount

Rise Time :

14ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

85m Ω @ 1.9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Turn On Delay Time :

15 ns