MSB710-RT1

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Mfr.Part #
MSB710-RT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.5A SC59
Stock
17,221
In Stock :
17,221

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Transistor Type :
PNP
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 150mA 10V
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
500mA
Terminal Position :
Dual
Vce Saturation (Max) @ Ib, Ic :
600mV @ 30mA, 300mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Elements :
1
Transition Frequency :
200MHz
JESD-30 Code :
R-PDSO-G3
Qualification Status :
COMMERCIAL
Polarity/Channel Type :
PNP
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
50V
Terminal Form :
Gull wing
Pbfree Code :
No
Peak Reflow Temperature (Cel) :
240
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
TIN LEAD
Transistor Application :
AMPLIFIER
JESD-609 Code :
e0
Current - Collector Cutoff (Max) :
100nA ICBO
Surface Mount :
yes
Power - Max :
200mW
Datasheets
MSB710-RT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MSB710-RT1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, MSB710-RT1 pinout, MSB710-RT1 datasheet PDF, MSB710-RT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MSB710-RT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MSB710-RT1


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MSB710-RT1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 150mA 10V.When VCE saturation is 600mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.

MSB710-RT1 Features


the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 200MHz


MSB710-RT1 Applications


There are a lot of Rochester Electronics, LLC
MSB710-RT1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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